发明名称 Flash memory device and operating method thereof
摘要 A flash memory device includes a memory cell string including a plurality of memory cells serially coupled to one another between a bit line and a source line, a page buffer configured to perform a precharging operation and a sensing operation with respect to the bit line, and a power supply unit configured to supply a certain supply voltage through the source line before the precharging operation.
申请公布号 US8437191(B2) 申请公布日期 2013.05.07
申请号 US20100914091 申请日期 2010.10.28
申请人 LEE JUNG-HWAN;PARK SEONG-JE;HYNIX SEMICONDUCTOR INC. 发明人 LEE JUNG-HWAN;PARK SEONG-JE
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
主权项
地址