发明名称 |
Flash memory device and operating method thereof |
摘要 |
A flash memory device includes a memory cell string including a plurality of memory cells serially coupled to one another between a bit line and a source line, a page buffer configured to perform a precharging operation and a sensing operation with respect to the bit line, and a power supply unit configured to supply a certain supply voltage through the source line before the precharging operation. |
申请公布号 |
US8437191(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20100914091 |
申请日期 |
2010.10.28 |
申请人 |
LEE JUNG-HWAN;PARK SEONG-JE;HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE JUNG-HWAN;PARK SEONG-JE |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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