发明名称 |
Enhancement of ultraviolet curing of tensile stress liner using reflective materials |
摘要 |
A method of manufacturing a semiconductor device begins by fabricating an n-type metal oxide semiconductor (NMOS) transistor structure on a semiconductor wafer. The method continues by forming an optically reflective layer overlying the NMOS transistor structure, forming a layer of tensile stress inducing material overlying the optically reflective layer, and curing the layer of tensile stress inducing material by applying ultraviolet radiation. Some of the ultraviolet radiation directly radiates the layer of tensile stress inducing material and some of the ultraviolet radiation radiates the layer of tensile stress inducing material by reflecting from the optically reflective layer. |
申请公布号 |
US8435841(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20100975515 |
申请日期 |
2010.12.22 |
申请人 |
RICHTER RALF;HUISINGA TORSTEN;GLOBALFOUNDRIES, INC. |
发明人 |
RICHTER RALF;HUISINGA TORSTEN |
分类号 |
H01L21/00;H01L29/745 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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