发明名称 |
ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device |
摘要 |
A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. |
申请公布号 |
US8436351(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20100969304 |
申请日期 |
2010.12.15 |
申请人 |
YAMAMURO TOMOFUMI;SANO MICHIHIRO;HORIO NAOCHIKA;KATO HIROYUKI;OGAWA AKIO;KOTANI HIROSHI;STANLEY ELECTRIC CO., LTD. |
发明人 |
YAMAMURO TOMOFUMI;SANO MICHIHIRO;HORIO NAOCHIKA;KATO HIROYUKI;OGAWA AKIO;KOTANI HIROSHI |
分类号 |
H01L33/28;H01L33/50;H01L33/06;H01L33/42 |
主分类号 |
H01L33/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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