发明名称 |
Programmable resistive memory cell with sacrificial metal |
摘要 |
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal.
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申请公布号 |
US8435827(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US201213348255 |
申请日期 |
2012.01.11 |
申请人 |
VENKATASAMY VENKATRAM;SUN MING;SETIADI DADI;SEAGATE TECHNOLOGY LLC |
发明人 |
VENKATASAMY VENKATRAM;SUN MING;SETIADI DADI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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