发明名称 |
Method to alter silicide properties using GCIB treatment |
摘要 |
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
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申请公布号 |
US8435890(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US201213482550 |
申请日期 |
2012.05.29 |
申请人 |
RUSSELL NOEL;HAUTALA JOHN J.;GUMPHER JOHN;TEL EPION INC. |
发明人 |
RUSSELL NOEL;HAUTALA JOHN J.;GUMPHER JOHN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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