发明名称 |
Memory and write control method |
摘要 |
A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more. |
申请公布号 |
US8437180(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20100795933 |
申请日期 |
2010.06.08 |
申请人 |
HIGO YUTAKA;HOSOMI MASANORI;IKARASHI MINORU;KANO HIROSHI;KUSUNOKI SHINICHIRO;OHMORI HIROYUKI;OISHI YUKI;YAMANE KAZUTAKA;YAMAMOTO TETSUYA;BESSHO KAZUHIRO;SONY CORPORATION |
发明人 |
HIGO YUTAKA;HOSOMI MASANORI;IKARASHI MINORU;KANO HIROSHI;KUSUNOKI SHINICHIRO;OHMORI HIROYUKI;OISHI YUKI;YAMANE KAZUTAKA;YAMAMOTO TETSUYA;BESSHO KAZUHIRO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|