Exposure mask used for manufacturing a semiconductor device having impurity layer and a semiconductor device

摘要

An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix form having rows and columns and a second transmission region where a plurality of dots through which the light is shielded or transmitted are arrayed into a matrix form having rows and columns and is disposed adjacent to the first transmission region. The dots arrayed in a row or a column of the first transmission region, which is adjacent to the second transmission region, have an area intermediate between areas of dots arrayed on both sides of the row or the column.