发明名称 |
Stacked power semiconductor device using dual lead frame and manufacturing method |
摘要 |
A stacked power semiconductor device includes vertical metal oxide semiconductor field-effect transistors and dual lead frames packaged with flip-chip technology. In the method of manufacturing the stacked power semiconductor device, a first semiconductor chip is flip chip mounted on the first lead frame. A mounting clips is connected to the electrode at back side of the first semiconductor chip. A second semiconductor chip is mounted on the second lead frame, which is then flipped and stacked on the mounting clip. |
申请公布号 |
US8436429(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US201113118445 |
申请日期 |
2011.05.29 |
申请人 |
XUE YAN XUN;HO YUEH-SE;SHI LEI;LU JUN;ZHAO LIANG;ALPHA & OMEGA SEMICONDUCTOR, INC. |
发明人 |
XUE YAN XUN;HO YUEH-SE;SHI LEI;LU JUN;ZHAO LIANG |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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