| 摘要 |
PURPOSE: A method for manufacturing a nitride semiconductor light emitting device is provided to improve light extraction efficiency by maximizing the area of a transparent electrode layer. CONSTITUTION: A light emitting device region(1) and a dummy region(2) are defined on a substrate. A first conductivity nitride semiconductor layer, an active layer, a second conductivity nitride semiconductor layer, and a transparent electrode layer for ohmic contact are successively formed on the substrate. A first electrode is formed on the exposed first conductivity nitride semiconductor layer. A second electrode is formed on the transparent electrode layer. The first and the second electrode include a first and a second bonding pad(18a,19a) formed on a contact region in a wire bonding process and a first and a second extension electrode(18b,19b).
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