发明名称 |
Photoelectric conversion device and imaging system using photoelectric conversion device |
摘要 |
A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions. |
申请公布号 |
US8436407(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20080168492 |
申请日期 |
2008.07.07 |
申请人 |
FURUICHI AIKO;NISHIMURA SHIGERU;CANON KABUSHIKI KAISHA |
发明人 |
FURUICHI AIKO;NISHIMURA SHIGERU |
分类号 |
H01L31/062;H01L27/146;H04N5/335;H04N5/359;H04N5/361;H04N5/369;H04N5/374;H04N101/00 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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