3D STRUCTURED NON-VOLATILE MEMORY DEVICE ANE METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A 3D structured non-volatile memory device and a method for manufacturing the same are provided to secure an erase characteristic by generating a large amount of holes in an erasing operation. CONSTITUTION: Memory cells are laminated on a channel(P_CH, S_CH, D_CH). Word lines(WL) are laminated on a pipe gate(PG). A source line(SL) is connected to one end of the channel. A bit line(BL) is connected to the other end of the channel. A first junction(JN1) is formed between the source line and the one end of the channel. A P type impurity is doped into the first junction. A second junction(JN2) is formed between the bit line and the other end of the channel. An N type impurity is doped into the second junction.