| 摘要 |
PURPOSE: A nonvolatile memory device and a reading method thereof are provided to improve the reliability of the nonvolatile memory device by efficiently preventing read errors. CONSTITUTION: Data of a selected memory cell is read(S110). One reading operation is performed by changing an unselected read voltage applied to an unselected memory cell until the data is accurately read if errors occur in the read data(S130). One more reading operation is performed by changing the unselected read voltage applied to the unselected memory cell until the data is accurately read if the errors occur in the above read data(S150).
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