| 摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve light extraction efficiency by removing a wire and an n-type electrode. CONSTITUTION: A first connection pole passes through an active layer(120) and a p-type semiconductor layer(130) and is electrically insulated from the active layer and the p-type semiconductor layer. The first connection pole is electrically connected to an n-type semiconductor layer. A conductive support substrate(150) is electrically insulated from the p-type semiconductor layer and is electrically contacted with the first connection pole. An n-type electrode(170) is electrically connected to the n-type semiconductor layer through the first connection pole and the support substrate. A p-type electrode(160) passes through the support substrate and is electrically connected to the p-type semiconductor layer. The p-type electrode is electrically insulated from the support substrate.
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