| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce a resistance of a line with a polysilicon layer by forming a metal silicide layer on the polysilicon layer. CONSTITUTION: Word lines are formed on a semiconductor substrate(101). An insulation layer(115) is formed on the surface of the semiconductor substrate and the sidewalls of the word lines. A metal layer is formed on a structure with the insulation layer. A first thermal process is performed to form the upper side of the silicon layer with a metal and silicon combining layer. The metal layer is removed from the upper side of the insulation layer. A silicon layer is formed on the structure with the metal and silicon combining layer. The metal and silicon combining layer is changed into a metal silicide layer(119B) by a second thermal process. The silicon layer which is not formed with the metal silicide layer is removed.</p> |
