| 摘要 |
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to improve an operation property by minimizing interference between a memory cell selected during a program operation and an adjacent memory cell. CONSTITUTION: A tunnel insulating layer(305) is formed on a semiconductor substrate. A floating gate is formed on the tunnel insulating layer. A dielectric layer(311) is formed on the floating gate. A control gate(319) includes a third silicon layer, a fourth silicon layer, and a conductive layer(315). The third silicon layer is formed on the dielectric layer. The fourth silicon layer is formed on the third silicon layer. The fourth silicon layer is wider than the third silicon layer. The conductive layer is formed on the fourth silicon layer. [Reference numerals] (AA) P well; (BB) Substrate</p> |
