发明名称 |
HEATING APPARATUS FOR SAPPHIRE GROWTH FURNACE |
摘要 |
PURPOSE: A heating apparatus for a sapphire growth furnace is provided to control respectively temperature according to the zones of a heat source, to decrease the flow speed of fused alumina in a growth furnace, and to prevent the generation of voids. CONSTITUTION: Fused alumina(1) is placed in the inner space(11) of a growth furnace(10). A heating source(20) surrounds the growth furnace and supplies heat to the growth furnace. The growth furnace is classified into multiple zones to supply heat. An insulating material(50) surrounds the outside of the heating source in order to maintain the temperature of the growth furnace. A load(60) is inserted from the outside to touch the fused alumina of the growth furnace.
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申请公布号 |
KR20130044531(A) |
申请公布日期 |
2013.05.03 |
申请号 |
KR20110108636 |
申请日期 |
2011.10.24 |
申请人 |
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY |
发明人 |
LEE, YOUNG CHEOL;KIM, YOUNG MIN;JO, HYUNG HO;KIM, HYOUNG JAE;KIM, SUNG RYUL |
分类号 |
C30B15/14;C30B15/20;C30B17/00;C30B29/20 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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