THIN FILM TRANSISTOR, DISPLAY DEVICE AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor efficiently supplying oxygen to an oxide semiconductor layer, thereby capable of improving transistor characteristics, and a display device and electronic equipment which include the thin film transistor.

SOLUTION: A thin film transistor of the present technique includes: a gate electrode provided on a substrate; an oxide semiconductor layer having a channel region at a position corresponding to the gate electrode; a channel protective film covering the channel region; a source electrode and a drain electrode provided on the oxide semiconductor layer on both sides of the channel protective film; a protective film provided at least on the source electrode and the drain electrode; and one or two or more recessed parts provided in the oxide semiconductor layer and filled with a constituent material which is the same as that of the protective film.

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