摘要 |
One illustrative method disclosed herein includes forming a first recess in a first active region of a substrate, forming a first layer of channel semiconductor material for a first PFET transistor in the first recess, performing a first thermal oxidation process to form a first protective layer on the first layer of channel semiconductor material, forming a second recess in the second active region of the semiconducting substrate, forming a second layer of channel semiconductor material for the second PFET transistor in the second recess and performing a second thermal oxidation process to form a second protective layer on the second layer of channel semiconductor material.
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