发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes: forming a metal layer on a semiconductor layer; forming a plated layer having a pattern corresponding to a pattern of a gate bus line which couples each gate finger of a plurality of FETs on the metal layer, the pattern corresponding to the pattern of the gate bus line having a deficient part; forming a mask layer which covers the metal layer exposed in the deficient part; and patterning the metal layer by using the plated layer and the mask layer as a mask.
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申请公布号 |
US2013109168(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213661471 |
申请日期 |
2012.10.26 |
申请人 |
ELECTRIC DEVICE INNOVATIONS, INC. SUMITOMO;SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
KAJII KIYOSHI |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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