| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device, a method for processing a substrate, a substrate processing apparatus and a non-transitory computer-readable recording medium are provided to secure a SiC layer including high flatness, thickness uniformity, and step coverage. CONSTITUTION: A substrate is placed in a process chamber. The process chamber is heated. Organic silicon gas is supplied into the heated process chamber. The process chamber encapsulates and maintains the organic silicon gas. The process chamber is exhausted. [Reference numerals] (AA) Reaction duration time; (BB) Exhaust valve; (CC,EE,GG) Process A; (DD,FF,HH) Process B; (II) Process C; (JJ) Process D</p> |
