| 发明名称 |
Method for Forming Resistive Switching Memory Elements with Improved Switching Behavior |
| 摘要 |
Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode. |
| 申请公布号 |
US2013107604(A1) |
申请公布日期 |
2013.05.02 |
| 申请号 |
US201113281777 |
申请日期 |
2011.10.26 |
| 申请人 |
WANG YUN;CHIANG TONY;HASHIM IMRAN;GOPAL VIDYUT;INTERMOLECULAR, INC. |
发明人 |
WANG YUN;CHIANG TONY;HASHIM IMRAN;GOPAL VIDYUT |
| 分类号 |
G11C11/00;G01N27/00;H01L21/8239 |
主分类号 |
G11C11/00 |
| 代理机构 |
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