HIGH METAL IONIZATION SPUTTER GUN

摘要

In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.