| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor wafer with a small amount of warpage. <P>SOLUTION: In the method for producing a nitride semiconductor wafer, a nitride semiconductor thick film crystal layer is formed on a void-formed substrate formed by providing a nitride semiconductor thin film crystal layer and a void-including metal nitride film provided thereon, on a sapphire substrate, and subsequently the void-formed substrate is removed. A warpage compensation layer composed of a material with a thermal expansion coefficient smaller than that of sapphire is formed on the rear face of the sapphire substrate, the void-formed substrate with the warpage compensation layer formed thereon is warped in a projection shape as viewed from the surface with the metal nitride film formed thereon by the difference of thermal expansion coefficients under the growth temperature of the nitride semiconductor thick film crystal layer, the nitride semiconductor thick film crystal layer is grown in a projection shape on the void-formed substrate warped in the projection shape, and after the completion of the growth, when the temperature returns from the growth temperature to the normal temperature, return of the nitride semiconductor thick film crystal layer from the projection shape to the flat shape generated accompanied with recovery of the flat shape of the void-formed substrate compensates projected warpage of the nitride semiconductor thick film crystal layer as viewed from the semiconductor polar face thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT |
