| 发明名称 |
P-TYPE TRANSITION METAL OXIDE-BASED FILMS SERVING AS HOLE TRANSPORT |
| 摘要 |
An improvement in a method of making a semiconducting device having a hole-collecting electrode includes coating the hole-collecting electrode with a p-type transition metal oxide through a sol-gel process. |
| 申请公布号 |
WO2013063562(A1) |
申请公布日期 |
2013.05.02 |
| 申请号 |
WO2012US62394 |
申请日期 |
2012.10.29 |
| 申请人 |
THE UNIVERSITY OF AKRON |
发明人 |
GONG, XIONG;YANG, TINGBIN |
| 分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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