SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

An MOSFET manufacturing method of the present invention is provided with: a step of preparing a substrate (10) composed of a silicon carbide; a step of forming a gate oxide film (20) in contact with the substrate (10); and a step of introducing nitrogen atoms into a region that includes an interface between the substrate (10) and a gate oxide film (20). In the step of introducing nitrogen atoms, the substrate (10) having the gate oxide film (20) formed thereon is heated in an atmosphere gas formed by heating a nitride process gas, which contains nitrogen atoms but does not contain oxygen atoms, to a temperature above 1,200°C, thereby introducing nitrogen atoms into the region including the boundary between the substrate (10) and the gate oxide film (20).