发明名称 |
ELECTRODE STRUCTURES, GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME |
摘要 |
An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element. |
申请公布号 |
US2013105863(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213489733 |
申请日期 |
2012.06.06 |
申请人 |
LEE JEONG-YUB;XIANYU WENXU;MOON CHANG-YOUL;PARK YONG-YOUNG;YANG WOO-YOUNG;HWANG IN-JUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONG-YUB;XIANYU WENXU;MOON CHANG-YOUL;PARK YONG-YOUNG;YANG WOO-YOUNG;HWANG IN-JUN |
分类号 |
H01L29/778;B82Y99/00;H01L21/338 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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地址 |
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