SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve manufacturing yield of a semiconductor device having split gate nonvolatile memory cells.

SOLUTION: A semiconductor device manufacturing method comprises: forming a silicon oxide film 24 and a silicon nitride film 25 on and above a selection gate electrode CG formed in a memory cell region of a semiconductor substrate 1; and subsequently removing the silicon oxide film 24 and the silicon nitride film 25 on and above the selection gate electrode CG positioned on an outermost (dummy cell region) in a gate length direction of a memory mat, thereby to reduce a level difference of a lower layer resist film 12 covering an end of the memory mat and improve thickness uniformity of a resist intermediate layer 13 formed on the lower layer resist film 12 to prevent local thinning or local disappearance.

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