发明名称 THIN FILM TRANSISTOR, ORGANIC EL LIGHT EMITTING ELEMENT, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 This thin film transistor has: a gate electrode (2) positioned on a substrate (1); a gate insulating layer (3) covering the gate electrode (2); a semiconductor layer (7) formed on the gate insulating layer (3); and a source electrode (4) and a drain electrode (5), which are electrically connected to the semiconductor layer (7). The gate insulating layer (3) includes: a first region (31) positioned above the gate electrode (2); and a second region (32), which is composed of a material same as that of the first region (31), and is positioned at an area different from the area above the gate electrode (2). The density of the first region (31) is higher than that of the second region (32).
申请公布号 WO2013061528(A1) 申请公布日期 2013.05.02
申请号 WO2012JP06484 申请日期 2012.10.10
申请人 PANASONIC CORPORATION 发明人 UKEDA, TAKAAKI;MIYAMOTO, AKIHITO;NANAI, NORISHIGE
分类号 H01L29/786;H01L21/312;H01L21/336;H01L51/05;H01L51/50 主分类号 H01L29/786
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