CMOS DEVICE HAVING DUAL METAL GATES AND MANUFACTURING METHOD THEREOF

摘要

Provided is a CMOS device having dual metal gates, comprising: a semiconductor substrate (100); a first type MOS device comprising a first gate stack and a second type MOS device having an opposite conductive type and comprising a second gate stack, the first type MOS device and the second type MOS device being formed on the substrate; the first gate stack being constructed by a first gate insulation layer (205B), a first work function adjustment layer (220) formed on the first gate insulation layer and applicable to the first type MOS device, and a first filling metal layer (230) surrounded by the first work function adjustment layer from the bottom and side faces; the second gate stack being constructed by a second gate insulation layer (205A), a second work function adjustment layer (220) formed on the second gate insulation layer and applicable to the second type MOS device, and a second filling metal layer (230) surrounded by the second work function adjustment layer from the bottom and side faces. Further provided is a manufacturing method of a CMOS device having dual metal gates.