THREE-DIMENSIONAL INTEGRATED ELECTRONIC DEVICE STRUCTURE INCLUDING INCREASED THERMAL DISSIPATION CAPABILITIES

摘要

PROBLEM TO BE SOLVED: To provide a microelectronic device structure including increased thermal dissipation capabilities.

SOLUTION: The structure includes a three-dimensional (3D) integrated chip assembly 105 that is flip chip bonded to a substrate 110. The chip assembly includes a device substrate 132 including an active device 144 disposed thereon. A cap layer 114 is physically bonded to the device substrate 132 to at least partially define a hermetic seal 148 about the active device 144. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

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