| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a width of a device terminal part of a power device. <P>SOLUTION: According to one embodiment, a semiconductor device includes a trench structure and a second semiconductor layer. The trench structure includes a first semiconductor layer of a first conductivity type having a device part and a device terminal part. In the trench structure, a groove is provided on a surface of the device terminal part and an insulator is buried so as to insulate the groove. The second semiconductor layer has a second conductivity type and provided on a surface of the first semiconductor layer. The second semiconductor layer contacts the groove at least on the device part side and has a depth shallower than that of the groove. The insulator and a surface protection film of the semiconductor device are composed of the same material. <P>COPYRIGHT: (C)2013,JPO&INPIT |
