| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an occurrence of variation of electrostatic capacity of a metallized film capacitor. <P>SOLUTION: In a metallized film capacitor of the present invention, at least one of metal vapor deposition electrodes of a pair of metallized films includes Al as main components, an atomic concentration ratio of Al:Si is in a range of from 95:5 to 85:15, an atomic concentration ratio of Cu is half or less of that of Si, and the atomic concentration ratio of Cu is high next to that of Si. Consequently, even when a metal vapor deposition electrode is used in an AC application, an occurrence of variation of electrostatic capacity of the metallized film capacitor can be suppressed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
