发明名称 Method of Releasing High Temperature Films and/or Devices From Metallic Substrates
摘要 Films and electronic devices can be released from metallic substrates by: (i) applying a coating of a polysilsesquioxane resin to a metallic substrate, (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, (iii) applying a polymeric film to the cured coating on the metallic substrate, (iv) further heating the coated metallic substrate to a temperature sufficient to cure the polymeric film, (v) optionally fabricating electronic devices on the polymeric film, and (vi) releasing the polymeric film from the metallic substrate.
申请公布号 US2013108501(A1) 申请公布日期 2013.05.02
申请号 US201213711780 申请日期 2012.12.12
申请人 DOW CORNING CORPORATION;DOW CORNING CORPORATION 发明人 ZHU BIZHONG;KATSOULIS DIMITRIS;ANDERSON NICOLE
分类号 B22C3/00;B29C37/00 主分类号 B22C3/00
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