发明名称 |
METAL OXIDE SEMICONDUCTOR DEVICE HAVING A PREDETERMINED THRESHOLD VOLTAGE AND A METHOD OF MAKING |
摘要 |
A metal-oxide-semiconductor (MOS) device having a selectable threshold voltage determined by the composition of an etching solution contacting a metal layer. The MOS device can be either a p-type or n-type MOS and the threshold voltage is selectable for both types of MOS devices. The etching solution is either an oxygen-containing solution or a fluoride-containing solution. The threshold voltage is selected by adjusting the flow rate of inert gases into an etching chamber to control the concentration of oxygen gas or nitrogen trifluoride.
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申请公布号 |
US2013105915(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113286605 |
申请日期 |
2011.11.01 |
申请人 |
WU PO-CHI;CHEN RYAN CHIA-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU PO-CHI;CHEN RYAN CHIA-JEN |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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