发明名称 APPARATUS AND METHOD FOR FABRICATING EPI WAFER AND EPI WAFER
摘要 A method for fabricating an epi wafer according to the embodiment comprises depositing an epi layer on a wafer in a first chamber; transferring the wafer to a second chamber connected to the first chamber; forming a protective layer on the wafer in the second chamber; and cooling the wafer in the second chamber. Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second chamber.
申请公布号 WO2013062317(A1) 申请公布日期 2013.05.02
申请号 WO2012KR08779 申请日期 2012.10.24
申请人 LG INNOTEK CO., LTD. 发明人 HWANG, MIN YOUNG
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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