发明名称 INTEGRATED CIRCUIT
摘要 According to one embodiment, provided are an amplifier transistor configured to amplify an input signal; a biasing circuit configured to set a bias voltage in such a manner as to allow the amplifier transistor to perform amplification; an electrostatic protective circuit configured to set the bias voltage for the amplifier transistor in such a manner as to make the amplifier transistor to turn off based on voltage to be applied to the amplifier transistor; and a switching circuit configured to switch the bias voltage for the amplifier transistor based on a power supply condition.
申请公布号 US2013106518(A1) 申请公布日期 2013.05.02
申请号 US201213422239 申请日期 2012.03.16
申请人 OGASAWARA YOSUKE;KABUSHIKI KAISHA TOSHIBA 发明人 OGASAWARA YOSUKE
分类号 H03F3/04 主分类号 H03F3/04
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