| 摘要 |
A diode includes: a semiconductor layer stack; cathode and anode electrodes formed on the semiconductor layer stack so as to be spaced apart from each other; and a protection film covering a region of an upper surface of the semiconductor layer stack. The semiconductor layer stack includes a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than the first nitride semiconductor layer, and has a channel. The anode electrode includes: a p-type third nitride semiconductor layer formed on the semiconductor layer stack; a first metal layer being in ohmic contact with the third nitride semiconductor layer; and a second metal layer being in contact with the first metal layer, and being in ohmic contact with the channel.
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