发明名称 |
THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE |
摘要 |
A thin-film semiconductor device includes a semiconductor device part and a capacitor part. The semiconductor device part includes: a light-transmitting first gate electrode; a light-shielding second gate electrode; a first insulating layer; a semiconductor layer; a second insulating layer; and a source electrode and a drain electrode. The capacitor part includes: a first capacitor electrode made of a light-transmitting conductive material; a dielectric layer; and a second capacitor electrode. The second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.
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申请公布号 |
US2013105798(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213710969 |
申请日期 |
2012.12.11 |
申请人 |
PANASONIC CORPORATION;PANASONIC CORPORATION |
发明人 |
KANEGAE ARINOBU;KAWASHIMA TAKAHIRO |
分类号 |
H01L27/04;H01L21/77 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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