发明名称 |
Methods of Forming Metal Oxide and Memory Cells |
摘要 |
Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material. |
申请公布号 |
US2013109147(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113282355 |
申请日期 |
2011.10.26 |
申请人 |
ROCKLEIN NOEL;RAMASWAMY D.V. NIRMAL;COLLINS DALE W.;LENGADE SWAPNIL;KRISHNAMURTHY SRIVIDYA;KORBER MARK;MICRON TECHNOLOGY, INC. |
发明人 |
ROCKLEIN NOEL;RAMASWAMY D.V. NIRMAL;COLLINS DALE W.;LENGADE SWAPNIL;KRISHNAMURTHY SRIVIDYA;KORBER MARK |
分类号 |
H01L21/02;C01B13/14;C01D17/00;C01F11/02;C01F17/00;C01G21/02;C01G23/04;C01G45/02;C01G49/02;H01L21/28 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|