| 摘要 |
<p>A thin film semiconductor device (100) is provided with a gate electrode (120), a channel layer (140), a first amorphous semiconductor layer (150), a channel protection layer (160), a pair of second amorphous semiconductor layers (171, 172) formed on both side surfaces of the channel layer (140), and a pair of contact layers (181, 182) that comes into contact with the side surfaces of the channel layer (140) with the second amorphous semiconductor layers (171, 172) therebetween, wherein: the gate electrode (120), the channel layer (140), the fist amorphous semiconductor layer (150), and the channel protection layer (160) are laminated in a manner such that the contours thereof overlap when viewed from above; the local energy level density of the first amorphous semiconductor layer (150) is higher than the local energy level densities of the second amorphous semiconductor layers (171, 172); and the band gaps of the second amorphous semiconductor layers (171, 172) are greater than the band gap of the first amorphous semiconductor layer (150).</p> |
