| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent disconnection of a video signal line when patterning the video signal line. <P>SOLUTION: A video signal line 107, a drain electrode 107 and a source electrode 107 are simultaneously formed on the same layer. The video signal line 107, etc is formed by three layers of a base layer 1071, an AlSi layer 1072 and a cap layer 1073. Conventionally, an alloy with a fast etching rate has been formed at a boundary with the cap layer 1073 in the AlSi layer 1072, thereby generating disconnection when patterning the video signal line 107, etc. In this invention, a Thin Film Transistor (TFT) is exposed to the atmosphere after the AlSi layer 1072 is formed by sputtering during formation of the video signal line 107, etc., and the cap layer 1073 is formed by sputtering after an Al oxide layer is formed on a surface of the AlSi layer. Accordingly, generation of the alloy in which the etching rate becomes partially fast is prevented to prevent generation of disconnection of the video signal line, etc. <P>COPYRIGHT: (C)2013,JPO&INPIT |
