发明名称 |
METHOD OF FORMING GROUP III-V MATERIAL LAYER, SEMICONDUCTOR DEVICE INCLUDING THE GROUP III-V MATERIAL LAYER, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR LAYER |
摘要 |
A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.
|
申请公布号 |
US2013105869(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213568555 |
申请日期 |
2012.08.07 |
申请人 |
LEE SANG-MOON;CHO YOUNG-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SANG-MOON;CHO YOUNG-JIN |
分类号 |
H01L29/78;H01L21/20;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|