| 摘要 |
A plasma processing apparatus has a long chamber having an opening portion, a gas supply apparatus that supplies gas into the chamber, a spiral coil having a long shape in parallel with the longitudinal direction of the chamber, a high-frequency electric power supply connected to the spiral coil, a base material mounting table which is disposed opposite to the opening portion and holds a base material and a moving mechanism which is disposed in parallel with the longitudinal direction of the chamber and the longitudinal direction of the opening portion, and enables the chamber and the base material mounting table to relatively move perpendicularly with respect to the longitudinal direction of the opening portion.
|
