| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniformly performing plasma-processing on a sample. <P>SOLUTION: A plasma processing device comprises: a vacuum processing chamber for performing plasma-processing on a sample; a dielectric window forming an upper face of the vacuum processing chamber; gas introduction means for introducing gas in the vacuum processing chamber; a sample table arranged in the vacuum processing chamber for locating the sample; an induction coil 4d provided at an upper part of the dielectric window; and a high frequency power source for supplying high frequency power to the induction coil 4d. The plasma processing device comprises a flat plate conductor 12 arranged at a lower part of the induction coil 4d. The induction coil 4d has a crossing power-feeding part, and the conductor 12 is arranged at the lower part of the power feeding part, adjusts distribution of an induction magnetic field of the power feeding part of the induction coil 4d, and corrects plasma distribution on the sample. <P>COPYRIGHT: (C)2013,JPO&INPIT |
