发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME |
摘要 |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A fluorine region is embedded in the second III-V compound layer under the gate electrode. A gate dielectric layer is disposed over the second III-V compound layer. The gate dielectric layer has a fluorine segment on the fluorine region and under at least a portion of the gate electrode.
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申请公布号 |
US2013105808(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113297525 |
申请日期 |
2011.11.16 |
申请人 |
WONG KING-YUEN;YU CHEN-JU;YAO FU-WEI;HSU CHUN-WEI;YU JIUN-LEI JERRY;HSIUNG CHIH-WEN;YANG FU-CHIH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WONG KING-YUEN;YU CHEN-JU;YAO FU-WEI;HSU CHUN-WEI;YU JIUN-LEI JERRY;HSIUNG CHIH-WEN;YANG FU-CHIH |
分类号 |
H01L29/20;H01L21/335;H01L29/778 |
主分类号 |
H01L29/20 |
代理机构 |
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地址 |
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