发明名称 |
Methods of Filling Voids in Copper Structures |
摘要 |
Disclosed herein are various methods of filing voids in copper conductive structures on integrated circuit devices. In one example, the method includes the steps of forming a conductive copper structure in a layer of insulating material and performing an electroless deposition process to selectively form a fill layer comprised of a conductive material on the copper containing structure, the fill layer being adapted to at least partially fill any voids that may exist in the conductive copper structure.
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申请公布号 |
US2013108779(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113285380 |
申请日期 |
2011.10.31 |
申请人 |
HUISINGA TORSTEN;HAHN JENS;GLOBALFOUNDRIES INC. |
发明人 |
HUISINGA TORSTEN;HAHN JENS |
分类号 |
B05D5/12 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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