| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a uniform side wall portion even when an object structure on which a thin film for forming a side wall portion is deposited is formed from an organic material in a double patterning process. <P>SOLUTION: A method for forming a photoresist pattern includes the steps of: forming a photoresist film on a substrate; exposing the photoresist film to an alkaline chemical agent; exposing the photoresist film which has been exposed to the chemical agent to light; and developing the exposed photoresist film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
