发明名称 |
SELF-BIAS CALCULATION ON A SUBSTRATE IN A PROCESS CHAMBER WITH BIAS POWER FOR SINGLE OR MULTIPLE FREQUENCIES |
摘要 |
Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.
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申请公布号 |
US2013110435(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213647624 |
申请日期 |
2012.10.09 |
申请人 |
APPLIED MATERIALS, INC.;APPLIED MATERIALS, INC. |
发明人 |
LERAY GARY;TODOROW VALENTIN NIKOLOV;BANNA SAMER |
分类号 |
G06F19/00;G01R27/16 |
主分类号 |
G06F19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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