| 摘要 |
<p>Provided in the present invention are a material based on silicon doped bismuth-tellurium for phase-changing storage devices and a preparation method therefor, wherein the material based on silicon doped bismuth-tellurium in the present invention has the chemical general formula of BixTeySi100-(x+y), with x and y being 0<x<=40, 0<y<=60,90<=x+y<100. The inventive material based on silicon doped bismuth-tellurium can be used in phase-changing storage devices because of the feature of reversible switching between a high resistance state and a low resistance state when electrical pulse signals are applied. Compared with conventional phase-changing thin film materials for phase-changing storage devices, such as GeTe, SiSbTe, GeSbTe, the material based on silicon doped bismuth-tellurium of the present invention has a simple composition, a faster phase-changing speed, lower energy required for phase-changing, and good compatibility with the manufacturing process of complementary metal oxide semiconductor (CMOS) devices, and is an excellent new storage material for phase-changing storage devices.</p> |
| 申请人 |
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY;CHENG, XIAOMIN;JU, CHEN;MIAO, XIANGSHUI |
发明人 |
CHENG, XIAOMIN;MIAO, XIANGSHUI |
