发明名称 REAR-POINT-CONTACT PROCESS FOR PHOTOVOLTAIC CELLS
摘要 <p>Embodiments of the invention generally relate to methods for performing rear-point-contact processes on substrates, particularly solar cell substrates. The methods generally include disposing a substrate on a substrate support which functions as a mask during deposition of a passivation layer on a back surface of the substrate. A process gas is introduced to an area between the back surface of the substrate and the substrate support in order to deposit the passivation layer on the back surface of the substrate. The deposited passivation layer has openings therethrough in order to facilitate electrical contact of the substrate with a metallization layer subsequently formed over the passivation layer. The passivation layer is formed without requiring a separate patterning and etching process of the passivation layer.</p>
申请公布号 WO2013062824(A1) 申请公布日期 2013.05.02
申请号 WO2012US60559 申请日期 2012.10.17
申请人 APPLIED MATERIALS, INC.;FREI, MICHEL R.;MUNGEKAR, HEMANT P.;PONNEKANTI, HARI K. 发明人 FREI, MICHEL R.;MUNGEKAR, HEMANT P.;PONNEKANTI, HARI K.
分类号 H01L31/042;H01L31/0216;H01L31/18 主分类号 H01L31/042
代理机构 代理人
主权项
地址
您可能感兴趣的专利